首页 | 本学科首页   官方微博 | 高级检索  
     


Functionalization of Si(1 0 0) with ferrocene derivatives via “click” chemistry
Authors:Andrea G Marrani  Robertino Zanoni  Fabrizio Cattaruzza  Maurizio Prato
Affiliation:a Dipartimento di Chimica, Università degli Studi di Roma “La Sapienza”, p.le Aldo Moro 5, 00185 Rome, Italy
b Instituto de Física, Facultad de Ingeniería, Herrera y Reissig 565, C.C. 30, 11000 Montevideo, Uruguay
c Dipartimento di Scienze Farmaceutiche and INSTM UdR di Trieste, Università di Trieste, Piazzale Europa 1, 34127 Trieste, Italy
d University of Namur, Chemistry Department, Laboratoire de Chimie Organique et des Matériaux Supramoléculaires, Rue de Bruxelles, 61 5000 Namur, Belgium
Abstract:We prepared ferrocene-modified silicon surfaces through a three-step procedure consisting of the photochemical anchoring of 11-bromo-1-undecene on H-Si(1 0 0), followed by treatment with NaN3 and by a reaction with ethynylferrocene via azide-alkyne Huisgen cycloaddition reaction, also known as “click” chemistry. The advantages of this approach are multiple: the synthetic approach is flexible, provided a Ctriple bond; length of mdashC tethering arm is present on the molecule of interest; a self-assembled hydrocarbon chain can guarantee a good coverage and resistance to the further synthetic steps; the redox centers are located at the outer surface, where a good contact with the electrolyte becomes possible. We have monitored the progression of the reaction steps by XPS, and characterized the resulting new hybrid on Si by electrochemical methods. The presence and chemical nature of the redox species covalently attached to the SAM on Si has been evaluated by XPS, while the overall coverage has been calculated by CV measurements. A reversible electrochemical response has been evidenced for the hybrids and the progressive ageing followed at thousands of oxidation-reduction cycles.
Keywords:Si functionalization  &ldquo  Click&rdquo  chemistry  Ferrocenes  XPS  Si electrochemistry
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号