In situ EC-STM studies of n-Si(1 1 1):H in 40% NH4F solution at pH 10

In situ electrochemical-scanning tunneling microcopy (EC-STM) was employed to investigate the etching dynamics of the moderately doped n-Si(1 1 1) electrode during cyclic voltammetric perturbation and at the seven different potentials including the open circuit potential (OCP) in 40% NH₄F solution at pH 10, which was prepared from 40% NH₄F and concentrated NH₄OH solution. The etching rate was significant at OCP and showed an exponential dependence on the potential applied to the silicon substrate electrode. Although some triangular pits were generated at the Si(1 1 1) surface, at the potentials more negative than OCP the site dependence in the removal of surface silicon atoms prevailed and led to the atomically flat Si(1 1 1):H surfaces with sharply defined steps of the step height 3.1 Å, where the interatomic distance of 3.8 Å was observed with a three-fold symmetry. At the potentials sufficiently more positive than OCP, macroporous hole was formed to limit further in situ EC-STM study. The results were compared with in situ EC-STM studies of the etching reaction of n-Si(1 1 1):H in the aqueous solution of dilute ammonium fluoride at pH 5, 40% NH₄F at pH 8, and 1 M NaOH reported in the literature.