Fabrication of KTa0.65Nb0.35O3 film by pulsed laser deposition on glass substrate with various buffer layers |
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Authors: | C.H. JungM.S. Choi K.S. LeeD.H. Yoon |
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Affiliation: | a SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea b School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea c School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea |
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Abstract: | KTa0.65Nb0.35O3 (KTN) thin films were deposited on amorphous glass substrates using a range of single buffer layers such as indium tin oxide (ITO), zinc oxide (ZnO), 3 at% Al-doped ZnO (AZO), and 3 at% Ga-doped ZnO (GZO), as well as a variety of multi-buffer layers such as SrTiO3 (STO)/ITO, STO/ZnO, STO/AZO, and STO/GZO using a pulsed laser deposition system. All films showed a polycrystalline perovskite phase with the exception of all single buffer layers and STO/ITO multi-buffer layers. The STO buffer layer is important for crystallizing KTN films due to the similar lattice constant and same crystal structure. The optical transmittance of all films exhibited a transmittance ?90% in the wavelength range. |
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Keywords: | KTa0.65Nb0.35O3 Pulsed laser deposition Buffer layer |
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