| 基于HSIM的铁电电容性能的研究 |
| |
| 引用本文： | 毕长红,罗玉香,胡滨,翟亚红,辜科.基于HSIM的铁电电容性能的研究[J].压电与声光,2012,34(4):614-616. |
| |
| 作者姓名： | 毕长红 罗玉香 胡滨 翟亚红 辜科 |
| |
| 作者单位： | 电子科技大学 微电子与固体电子学院,四川 成都,610054 |
| |
| 基金项目： | 电子薄膜与集成器件国家重点实验室创新基金 |
| |
| 摘 要： | 基于对铁电电容实际测试性能及物理模型的分析,在仿真软件HSIM原始电容模型库的基础上,通过对实验室制备的铁电电容电滞回线的拟合,得出新的模型库参数。将这些参数导入HSIM中对铁电存储器(FRAM)进行仿真,根据仿真结果对比铁电电容的性能,并由此优化铁电电容的性能,使之更匹配于电路特性。
|
| 关 键 词： | 铁电电容 铁电存储器 剩余极化 |
Research of the Ferroelectric Capacitor Performance Based on HSIM |
| |
| BI Changhong,LUO Yuxiang,HU bin,ZHAI Yahong and GU Ke.Research of the Ferroelectric Capacitor Performance Based on HSIM[J].Piezoelectrics & Acoustooptics,2012,34(4):614-616. |
| |
| Authors: | BI Changhong LUO Yuxiang HU bin ZHAI Yahong and GU Ke |
| |
| Affiliation: | (School of Microelectronics and Solid-state Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China) |
| |
| Abstract: | The new model parameters are acquired by means of fitting the ferroelectric capacitors’hysteresis loops fabricated in laboratory based on HSIM actual test performance and initial capacitive model.The FRAM is simulated by introducing these parameters into HSIM.The performance of the ferroelectric capacitor is compared according to the simulation results.Hence the performance of the ferroelectric capacitor can be optimized to match the circuit characteristics. |
| |
| Keywords: | ferroelectric capacitor FRAM residual polarization |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《压电与声光》浏览原始摘要信息 |
|
点击此处可从《压电与声光》下载全文 |
|
