Modeling and simulation of emissivity of silicon-related materials and structures |
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Authors: | N M Ravindra Krshna Ravindra Sundaresh Mahendra Bhushan Sopori Anthony T Fiory |
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Affiliation: | (1) Department of Physics, New Jersey Institute of Technology, 07102 Newark, NJ;(2) Intern at NJIT from Union County Magnet High School, 07076 Scotch Plains, NJ;(3) Intern at NJIT from Millburn High School, 07041 Millburn, NJ;(4) National Renewable Energy Laboratory, 80401 Golden, CO |
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Abstract: | A brief review of the models that have been proposed in the literature to simulate the emissivity of silicon-related materials
and structures is presented. The models discussed in this paper include ray tracing, numerical, phenomenological, and semi-quantitative
approaches. A semi-empirical model, known as Multi-Rad, based on the matrix method of multilayers is used to evaluate the
reflectance, transmittance, and emittance for Si, SiO2/Si, Si3N4/SiO2/Si/SiO2/Si3N4 (Hotliner), and separation by implantation of oxygen (SIMOX) wafers. The influence of doping concentration and dopant type
as well as the effect of the angle of incidence on the radiative properties of silicon is examined. The results of these simulations
lead to the following conclusions: (1) at least within the limitations of the Multi-Rad model, near the absorption edge, the
radiative properties of Si are not affected significantly by the angle of incidence unless the angle is very steep; (2) at
low temperatures, the emissivity of silicon shows complex structure as a function of wavelength; (3) for SiO2/Si, changes in emissivity are dominated by substrate effects; (4) Hotliner has peak transmittance at 1.25 μm, and its emissivity
is almost temperature independent; and (5) SIMOX exhibits significant changes in emissivity in the wavelength range of 1–20
μm. |
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Keywords: | Si emissivity Hotliner SIMOX |
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