ZnO薄膜紫外探测器的研制

利用射频磁控溅射技术在SiO2/n-Si衬底上制备了ZnO薄膜,并在薄膜上制作了Ag-ZnO肖特基二极管和Ag-ZnO-Ag肖特基MSM叉指结构的紫外探测器。所制备的ZnO薄膜具有良好的c轴择优取向,表面平整,在可见光范围具有较高的透射率,吸收边在370 nm附近;所制作的肖特基二极管显示了良好的整流特性,有效势垒高度约为0.65 eV;所制作的MSM紫外探测器在5 V偏压下漏电流为3.3×10-8A,在紫外波段有较高的响应度,光响应度峰值在365 nm附近。

Ultraviolet Photodetector based on ZnO films

The ZnO films were deposited on SiO2/n-Si by RF magnetron sputtering.ZnO Schottky diodes and the interdigital metal-semiconductor-metal(MSM) ultraviolet(UV) photodetectors were fabricated by using Ag as Schottky contact metal.The ZnO films have a preferential c-axis orientation and smooth surface.The films exhibit a high transmittance in visible region and have sharp fundamental absorption edge at about 370 nm.The Schottky diodes exhibit the distinct rectifying characteristics.The barrier height of Ag-ZnO Schottky contacts is about 0.65 eV.I-V characteristics of the MSM photodetector indicates that the leakage current is 33 nA at a bias of 5V.The photoresponsivity of the detector is high in the ultraviolet range and has a maximum value near by 365 nm.