| 3D IC受热载荷作用下的数值模拟 |
| |
| 引用本文： | 杜秀云,唐祯安. 3D IC受热载荷作用下的数值模拟[J]. 中国集成电路, 2011, 20(4): 44-47,55 |
| |
| 作者姓名： | 杜秀云 唐祯安 |
| |
| 作者单位： | 1. 大连理工大学,电子信息工程学院,辽宁,大连,116024;辽宁师范大学,物理与电子技术学院,辽宁,大连,116029
2. 大连理工大学,电子信息工程学院,辽宁,大连,116024 |
| |
| 基金项目： | 国家自然科学基金重点项目 |
| |
| 摘 要： | 针对基于硅通孔技术的3D IC在工作过程中的受热问题,利用热弹性力学理论建立了三维有限元数值模拟分析模型,对结构进行了热分析,同时探讨了器件由此产生的热应力.计算结果表明,由芯片到底面的热通路为散热的主要通道,其它表面的对流条件对热场分布影响不大;芯片与通孔接触面的边角处有应力集中,在热载荷的长期、交变作用下容易发生开...
|
| 关 键 词： | 3D 热应力 温度场 有限元 硅通孔 |
A Finite Element Simulation for 3D-IC under Thermal Loads |
| |
| DU Xiu-yun,TANG Zhen-an. A Finite Element Simulation for 3D-IC under Thermal Loads[J]. China Integrated Circuit, 2011, 20(4): 44-47,55 |
| |
| Authors: | DU Xiu-yun TANG Zhen-an |
| |
| Affiliation: | 1 Department of Electronic Engineering, Dalian University of Technology, Dalian 116024 ,China, 2 School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029,China ) |
| |
| Abstract: | 3D finite element simulation models have been established for through silicon via structures of 3D integrated circuits. Based on the heat dissipation of working process, the temperature field and the thermal induced stresses of 3D IC structures are obtained by thermal simulation analysis. The numerical results indicate that the heat path from chip to the bottom surface is the main way for the heat dissipation, while the convection coefficient applied on the other outer surface has little effect on the temperature distribution. The stress concentration occurs in the interface between the Si and the Cu vias. They are easier to crack under long-term alternating thermal loads. |
| |
| Keywords: | 3D thermal stresses temperature field finite element mesh TSV |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
