| 电源控制芯片中的过流保护设计 |
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| 引用本文： | 徐新龙,程东方,孟祥斌,赵湘源,沈伟星. 电源控制芯片中的过流保护设计[J]. 中国集成电路, 2011, 20(4): 29-33,65 |
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| 作者姓名： | 徐新龙 程东方 孟祥斌 赵湘源 沈伟星 |
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| 作者单位： | 上海大学微电子中心,上海,200072 |
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| 基金项目： | 上海大学第四届研究生创新基金 |
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| 摘 要： | 本文介绍采用直接检测LDMOS漏端电压来判断其是否过流的设计方法,给出了电路结构.通过电路分析,并利用BCD高压工艺,在cadence环境下进行电路仿真验证.结果证明:该方法能够快速、实时地实现过流保护功能,相比其它方法,在功耗、效率、工艺兼容性、成本等方面均有很大提高,可以直接应用于电源控制芯片中的安全保护设计.
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| 关 键 词： | 闭环实时控制 电源控制芯片 过流保护 |
Overcurrent Protection Design in Single Power Control Chip |
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| XU Xin-long,CHENG Dong-fang,MENG Xiang-bin,ZHAO Xiang-yuan,SHEN Wei-xing. Overcurrent Protection Design in Single Power Control Chip[J]. China Integrated Circuit, 2011, 20(4): 29-33,65 |
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| Authors: | XU Xin-long CHENG Dong-fang MENG Xiang-bin ZHAO Xiang-yuan SHEN Wei-xing |
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| Affiliation: | (Microelectronics Research and Development Center , Shanghai University ,Shanghai 100029) |
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| Abstract: | This paper proposes a method to determine if the LDMOS is overcurrent by detecting the drain voltage of LDMOS directly and also designs its circuit structure. Through the circuit analysis run in cadence using BCD high voltage process, this method shows that it can protect the IC from overcurrent problem faster than the existing methods. This method introduced in this paper also shows advances in power consumption, efficiency, process compatibility and the cost compared to traditional current detecting methods, which makes itsuitable to be used in power control ICs directly. |
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| Keywords: | Closed-loop real-time control Power Supply Control Chip Over-current protection |
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