Light-induced E.S.R. in amorphous silicon |
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| Authors: | A Friederich D Kaplan |
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| Affiliation: | (1) Laboratoire Central de Recherches, Thomson-C.S.F., 91401 Orsay, France |
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| Abstract: | A model for defects in hydrogenated amorphous silicon (TS > 150‡C) observed by light-induced E.S.R. is presented. It is based on a comparison with E.S.R. signals observed from irradiation
defects in crystalline silicon. The magnitude of the E.S.R. signal as a function of hydrogen concentration is also discussed. |
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| Keywords: | silicon hydrogen lightinduced E S R model defects |
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