Specific features of the generation-recombination properties of bistable defects in semiconductors: Manifestation in Hoffmann’s function

Features of the temperature dependence of the concentration of majority free charge carriers in semiconductors on temperature-dependent discharging of bistable centers differing in electrical activity are treated theoretically. Specifically, two-level acceptors, two-level donors, and amphoteric centers are considered. The effects of the level of compensation and the ratio between the binding energies of one and two electrons at a center upon the discharging are studied. The results are represented as features of the behavior of Hoffmann’s function.