Metal--semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation |
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Authors: | Vijayaraghavan Aravind Kanzaki Kenichi Suzuki Saturo Kobayashi Yoshihiro Inokawa Hiroshi Ono Yukinori Kar Swastik Ajayan Pulickel M |
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Affiliation: | NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan, and Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA. vijaya@rpi.edu |
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Abstract: | We report the effect of low-energy (1 keV) electron beam irradiation on gated, three-terminal devices constructed from metallic single-walled carbon nanotubes. Pristine devices, which exhibited negligible gate voltage response at room temperature and metallic single-electron transistor characteristics at low temperatures, when exposed to an electron beam, exhibited ambipolar field effect transistor (room temperature) and single-electron transistor (low temperature) characteristics. This metal-semiconductor transition is attributed to inhomogeneous electric fields arising from charging during electron irradiation. |
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