| 超高速GaAs IC研制动态 |
| |
| 引用本文： | 戴玲华.超高速GaAs IC研制动态[J].微纳电子技术,1991(1). |
| |
| 作者姓名： | 戴玲华 |
| |
| 作者单位： | 机电部第13研究所 石家庄 |
| |
| 摘 要： | 本文叙述了最近几年国外研制超高速GaAs器件和IC的成果以及开发新技术的状况。
|
| 关 键 词： | 超高速数字集成电路 砷化镓 半导体器件 |
Developing Trends of Ultra-High Speed GaAs IC |
| |
| Dai Linghua.Developing Trends of Ultra-High Speed GaAs IC[J].Micronanoelectronic Technology,1991(1). |
| |
| Authors: | Dai Linghua |
| |
| Abstract: | The state of ultra-high speed GaAs devices and IC's and developments of novel technique in recent years are described. |
| |
| Keywords: | Ultra-high speed digital IC Gallium arsenid Semiconductor device |
| 本文献已被 CNKI 等数据库收录！ |
