Comparison between lasers isolated by oxygen implantation and SiO2isolated stripe lasers |
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Authors: | Beneking H Grote N Krautle H Roth W |
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Affiliation: | Technical University of Aachen, Aachen, Germany; |
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Abstract: | GaAs/GaAlAs DH lasers isolated by an SiO2layer on top of the p-contacting layer are compared to DH lasers in which the isolation is maintained by an isolating the O+ -implanted layer within the n+- substrate. Measurements were performed on four O+ isolated lasers and five SiO2isolated lasers with the same composition and thickness of active and upper confinement layers. Threshold currents of both groups were very similar, whereas the O+ -implanted lasers showed superior thermal resistances by a factor of 2. Thermal resistances were measured by the shift of the lasing spectra with power dissipation. |
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