基于氮化镓器件的Boost PFC设计与损耗分析

基于硅(Si)器件的PFC Boost已被广泛研究。由于Si器件特性已经被使用接近极限，基于其的变换器特性也很难再提高。氮化镓(GaN)器件的逐渐普及为变换器性能提高到一个新的等级提供了可能。本文系统介绍一款基于GaN器件的Boost PFC的设计，从主电路设计、效率分析到控制原理。最终选用NCP1654 作为电路控制器并采用GaN HEMT及SiC二极管实现了一款300W 200kHz的PFC,最高理论效率达到98.1%。通过仿真和实验验证了系统设计，展现了宽禁带器件在提升系统效率方面的潜力。

Loss analysis and design of GaN-Based Boost PFC

Si-based PFC Boost has been widely studied. As the characteristics of Si devices have been reach the limit, converter is very difficult to improve. The growing popularity of GaN devices have the capacity for improved converter performance to a new level. This paper introduces a design of Boost PFC GaN-based devices, from the main circuit design, loss analysis to control principle. Finally, the use of GaN HEMT and SiC diodes and selected NCP1654 as the controller to achieve a 300W 200kHz PFC,which maximum theoretical efficiency reached 98.1%. The system design is verified by simulation and experiment, which shows the potential of wide band gap semiconductor device in improving system efficiency.