基于180nm COMS工艺的低功耗温度传感器电路设计

为降低温度传感器的功耗，提出一种结构简单的片上温度-频率转换器电路。该转换器能够根据与绝对温度成比例（proportional to absolute temperature, PTAT）的电流检测出温度，利用源极耦合多谐振荡器电路，将温度等效PTAT电流转换成频率。提出的电路采用标准180nm CMOS技术设计，面积约为0.061 mm2。通过多次实际测量，结果显示：当电源电压为0.8 V ±10%时，该温度传感器能够在?43 °C~+85 °C的温度范围内良好工作，并且经过单点校正之后，最大温度误差小于±1 °C。当电源电压为0.8 V时，+85 °C条件下的平均功率损耗仅为500 nW。

Low power temperature sensor circuit design based on COMS 180nm process

In order to reduce the power consumption of the temperature sensor, a simple on-chip temperature-frequency converter circuit is proposed. The converter can detect temperature in terms of the proportional to absolute temperature (PTAT) current, and then converts the temperature equivalent to the frequency by using the source coupled multi-vibrator circuit. The proposed circuit has been designed and fabricated in a standard 180-nm CMOS technology and occupies area of about 0.061 mm2. Through many practical measurement. The test results show that when the power supply voltage is 0.8 V + 10%, the temperature sensor can work within the temperature range of ?43 °C~+85 °C, and after a single point after correction, the maximum temperature error is less than ±1 °C .When the power supply voltage is 0.8 V, the average power loss at +85 °C is only 500 nW.