首页 | 本学科首页   官方微博 | 高级检索  
     

2kV高稳定度高压脉冲电源设计
引用本文:罗通顶,田耕,杜继业,阮林波,张雁霞,李显宝,王晶,李海涛.2kV高稳定度高压脉冲电源设计[J].计算机测量与控制,2017,25(5):270-272.
作者姓名:罗通顶  田耕  杜继业  阮林波  张雁霞  李显宝  王晶  李海涛
作者单位:西北核技术研究所 强脉冲辐射环境模拟与效应国家重点实验室,西安 710024,西北核技术研究所 强脉冲辐射环境模拟与效应国家重点实验室,西安 710024,西北核技术研究所 强脉冲辐射环境模拟与效应国家重点实验室,西安 710024,西北核技术研究所 强脉冲辐射环境模拟与效应国家重点实验室,西安 710024,西北核技术研究所 强脉冲辐射环境模拟与效应国家重点实验室,西安 710024,西北核技术研究所 强脉冲辐射环境模拟与效应国家重点实验室,西安 710024,西北核技术研究所 强脉冲辐射环境模拟与效应国家重点实验室,西安 710024,西北核技术研究所 强脉冲辐射环境模拟与效应国家重点实验室,西安 710024
基金项目:国家自然科学基金资助项目(11605141,9);国家重点实验室基金(SKLIPR1502Z)。
摘    要:在一些光学精密仪器的应用场合中,不仅需要脉冲电源在时间上能够提供精确的控制,而且需要具有高稳定度的输出,以提高光电系统的探测性能;运用基于高压开关的两级式方法,采用单级高功率MOSFET开关结合具有高稳定输出的直流电源的结构,设计了输出辐度可达2kV的高稳定负脉冲电源;测试结果表明,在输出脉冲宽度为8 μs时,脉冲前沿约为48 ns,系统延迟时间约为140 ns,负脉冲超调参数约为1%。该系统具有结构简单、可靠性高、高稳定性输出等优点,可以为特定的光电器件提供优质的控制方式。

关 键 词:脉冲电源  高压电源  固态开关  功率MOSFET
收稿时间:2016/10/31 0:00:00
修稿时间:2016/12/19 0:00:00

Design of A High-Stability High-Voltage Pulse Power with 2kV Output
Luo Tongding,Ting Geng,Du Jiye,Ruan Linbo,Zhang Yanxi,Li Xianbao,Wang Jing and Li Haitao.Design of A High-Stability High-Voltage Pulse Power with 2kV Output[J].Computer Measurement & Control,2017,25(5):270-272.
Authors:Luo Tongding  Ting Geng  Du Jiye  Ruan Linbo  Zhang Yanxi  Li Xianbao  Wang Jing and Li Haitao
Affiliation:State Key laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi''an 710024, China,State Key laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi''an 710024, China,State Key laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi''an 710024, China,State Key laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi''an 710024, China,State Key laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi''an 710024, China,State Key laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi''an 710024, China,State Key laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi''an 710024, China and State Key laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi''an 710024, China
Abstract:In some applications of precision measurement with optical instruments, the pulse power not only should have the ability of providing a high precise control in time, but also should giving a high stability of output to improve the performance of the the photoelectric detectors. This paper presents a design of negative pulse power with the output up to 2kV. It is based on a two-hierarchical method with a high-voltage switch and has a combination of a single high-power MOSFET switch and a high-stability DC power in the system. The results of the measurement shows that the designed system has a inherent delay of approximately 140 nanoseconds, the output pulse has a leading edge of approximately 48 nanoseconds and a overshoot parameter of approximately 1% when the output pulse width is 8 microseconds. The designed pulse power has many advantages such as simple structure, high-reliability, high-stability output and so on ,which can provide a prefect control method for a few particular photoelectric detectors.
Keywords:pulse power  high-voltage power  solid-state switch  power MOSFET
点击此处可从《计算机测量与控制》浏览原始摘要信息
点击此处可从《计算机测量与控制》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号