应用于S波段的高线性低噪声放大器

采用E-mode 0.25um GaAs pHEMT工艺，2.0mm × 2.0mm 8-pin双侧引脚扁平封装，设计了一款应用于S波段的噪声系数低于0.5dB的低噪声放大器。通过采用共源共栅结构、有源偏置网络和多重反馈网络等技术改进了电路结构，该放大器具有低噪声，高增益，高线性等特点，是手持终端应用上理想的一款低噪声放大器。测试结果表明在2.3-2.7GHz内，增益大于18dB，输入回波损耗小于-10dB，输出回波损耗小于-16dB，输出三阶交调点大于36dB。

Highly Linear LNA with Low Noise for S Band Application

By employing the 0.25um GaAs enhancement mode pHEMT process, a low noise amplifier has been developed with sub 0.5dB noise figure(NF) for S band application, and is housed in a 2.0mm ×2.0mm miniature package with 8-pin dual-flat-lead(DFN). The LNA has achieved low noise, high gain, and high linearity with the use of cascade structure, active bias network, as well as multiple feedback networks, which is an ideal selected for hand-held terminal. The measured results show that the LNA which gain greater than 18dB, input return loss less than -10dB, output return loss less than -16dB, and more than 36dBm output third-order intercept point from 2.3 to 2.7GHz.