3D Monte Carlo Modeling of Thin SOI MOSFETs Including the Effective Potential and Random Dopant Distribution

We use the effective potential to include quantum mechanical effects in thin SOI MOSFETs simulated with 3D Monte Carlo. We explore the role of discrete dopant distributions on the threshold voltage of the device within the framework of the effective potential by examining the current-voltage behavior as well as the electron distributions within the device. We find that simulations with the effective potential produce a similar shift in current as classical simulations when the dopants are considered to have a random discrete distribution instead of a uniform distribution.