Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping |
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Authors: | Goutam Kumar Dalapati Terence Kin Shun Wong Yang Li Ching Kean Chia Anindita Das Chandreswar Mahata Han Gao Sanatan Chattopadhyay Manippady Krishna Kumar Hwee Leng Seng Chinmay Kumar Maiti Dong Zhi Chi |
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Affiliation: | 1. Belarusian State University of Informatics and Radioelectronics, P. Brovki 6, Minsk, 220013, Republic of Belarus 2. SMC (Technological Centre), Zelenograd, Moscow, 124 498, Russia 3. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
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Abstract: | Few-wall carbon nanotubes were synthesized by methane/acetylene decomposition over bimetallic Fe-Mo catalyst with MgO (1:8:40) support at the temperature of 900°C. No calcinations and reduction pretreatments were applied to the catalytic powder. The transmission electron microscopy investigation showed that the synthesized carbon nanotubes [CNTs] have high purity and narrow diameter distribution. Raman spectrum showed that the ratio of G to D band line intensities of I G/I D is approximately 10, and the peaks in the low frequency range were attributed to the radial breathing mode corresponding to the nanotubes of small diameters. Thermogravimetric analysis data indicated no amorphous carbon phases. Experiments conducted at higher gas pressures showed the increase of CNT yield up to 83%. M?ssbauer spectroscopy, magnetization measurements, X-ray diffraction, high-resolution transmission electron microscopy, and electron diffraction were employed to evaluate the nature of catalyst particles. |
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