Phosphorus-doped bismuth telluride films by electrodeposition |
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Authors: | Jian Zhou Qinghan Lin Hengyi Li Xuan Cheng |
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Affiliation: | 1. Department of Materials Science and Engineering, College of Materials, Xiamen 361005, China;2. Fujian Key Laboratory of Advanced Materials, Xiamen University, Xiamen 361005, China |
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Abstract: | Phosphorus-doped Bi2Te3 films were synthesized on a stainless-steel electrode by electrochemical deposition. X-ray diffraction, scanning electron microscopy and transmission electron microscopy confirmed that the films are single-phased Bi2Te3 solid solutions with a rhombohedral structure. The as-prepared films exhibit n-type characteristics with the Hall coefficient −1.76E−2 m3 C−1 and the electrical conductivity 280 S cm−1. The thermal conductivity is 0.47 W m−1 K−1, which is as low as one-third of the value observed in the bulk material. The doped P atoms occupy the interstitial positions between the two adjacent Te(1) layers connected by Van der Waals interaction in Bi2Te3. |
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Keywords: | A Chalcogenides C Electrochemical techniques C Electron microscopy D Electrical conductivity D Thermal conductivity |
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