| 硅锗基区异质结双极型晶体管的研究进展 |
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| 引用本文： | 阮刚.硅锗基区异质结双极型晶体管的研究进展[J].电子学报,1993,21(8):67-73,54. |
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| 作者姓名： | 阮刚 |
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| 作者单位： | 复旦大学微电子学研究所 上海200433 |
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| 摘 要： | 本文综述了SiGe-HBT工艺及性能研究的最新进展,提出了若干重要的研究课题.
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| 关 键 词： | 硅锗应变层 双极型晶体管 异质结 |
Research Progress on SiGe-Base HBT |
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| Ruan Gang.Research Progress on SiGe-Base HBT[J].Acta Electronica Sinica,1993,21(8):67-73,54. |
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| Authors: | Ruan Gang |
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| Abstract: | In this paper,the recent research progress on process and performances of SiGe-HBT are reviewed as well as some significant research projects are suggested. |
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| Keywords: | SiGe strain layer Bipolar transistor Heterojunction Heterojunction bipolar transistor |
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