| 硅锗基区异质结双极型晶体管的研究进展 |
| |
| 引用本文： | 阮刚. 硅锗基区异质结双极型晶体管的研究进展[J]. 电子学报, 1993, 21(8): 67-73,54 |
| |
| 作者姓名： | 阮刚 |
| |
| 作者单位： | 复旦大学微电子学研究所 上海200433 |
| |
| 摘 要： | 本文综述了SiGe-HBT工艺及性能研究的最新进展,提出了若干重要的研究课题.
|
| 关 键 词： | 硅锗应变层 双极型晶体管 异质结 |
Research Progress on SiGe-Base HBT |
| |
| Ruan Gang. Research Progress on SiGe-Base HBT[J]. Acta Electronica Sinica, 1993, 21(8): 67-73,54 |
| |
| Authors: | Ruan Gang |
| |
| Abstract: | In this paper,the recent research progress on process and performances of SiGe-HBT are reviewed as well as some significant research projects are suggested. |
| |
| Keywords: | SiGe strain layer Bipolar transistor Heterojunction Heterojunction bipolar transistor |
| 本文献已被 CNKI 维普 等数据库收录！ |
|
