Monocrystalline silicon used for integrated circuits: still on the way |
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Authors: | Jia-he Chen De-ren Yang and Duan-lin Que |
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Affiliation: | (1) State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China |
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Abstract: | With the rapid development of semiconductor technology, highly integrated circuits (ICs) and future nano-scale devices require
large diameter and defect-free monocrystalline silicon wafers. The ongoing innovation from silicon materials is one of the
driving forces in future micro and nano-technologies. In this work, the recent developments in the controlling of large diameter
silicon crystal growth processes, the improvement of material features by co-doping with the intend-introduced impurities,
and the progress of defect engineered silicon wafers (epitaxial silicon wafer, strained silicon, silicon on insulator) are
reviewed. It is proposed that the silicon manufacturing infrastructure could still meet the increasingly stringent requirements
arising from ULSI circuits and will expand Moore’s law into a couple of decades. |
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Keywords: | Czochralski silicon crystal growth defect engineering defect engineered silicon |
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