Correlation of photoluminescence linewidths with carrier concentration in p-Ga0.52In0.48P |
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| Authors: | D. J. Arent M. W. Peterson C. Kramer K. A. Bertness J. A. Turner |
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| Affiliation: | (1) National Renewable Energy Laboratory, 1617 Cole Boulevard, 80401 Golden, CO;(2) Present address: National Institute of Standards and Technology, 325 Broadway, MS 815.04, 80303-3328 Boulder, CO |
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| Abstract: | We find a statistically significant correlation between carrier concentration and the Lorentzian linewidth factor determined from a Voigt lineshape fit to roomtemperature photoluminscence (PL) measurements for partially ordered p-Ga0.52In0.48P epitaxially deposited by organometallic vapor-phase deposition on GaAs. The correlation is independent of the amount of ordering present in the material. For carrier concentrations over the range of ~1016 to 1019 cm−3, PL provides rapid and nondestructive evaluation, with increasing accuracy above carrier concentration levels of 5 × 1017 cm3. |
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| Keywords: | Carrier concentration Gallium indium phosphide Nondestructive characterization Photoluminescence |
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