| 直接键合微腔结构的光谱特性 |
| |
| 引用本文： | 劳燕锋,吴惠桢,黄占超,刘成,曹萌.直接键合微腔结构的光谱特性[J].半导体学报,2006,27(13):304-308. |
| |
| 作者姓名： | 劳燕锋 吴惠桢 黄占超 刘成 曹萌 |
| |
| 作者单位： | 中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室，上海 200050;中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室，上海 200050;中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室，上海 200050;中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室，上海 200050;中国科学院上海微系统与信息技术研究所 信息功能材料国家重点实验室，上海 200050 |
| |
| 摘 要： | 采用直接键合方法制备了法布里-珀罗共振微腔结构，并用传输矩阵方法对其反射光谱进行了理论模拟. 通过构造键合界面两侧多层薄膜材料的光学厚度呈现指数规律变化的模型，分析了键合效应对微腔结构光学特性的影响. 结果表明：在较低退火温度下(如580℃)进行直接键合有利于高光学性能微腔结构的制备，而提高退火温度则需要在键合结构中加入缺陷阻挡层以提高键合质量.
|
| 关 键 词： | 晶片直接键合 界面缺陷 反射光谱 |
Optical Properties of Direct Wafer Bonded Micro-Cavity Structures |
| |
| Lao Yanfeng,Wu Huizhen,Huang Zhanchao,Liu Cheng and Cao Meng.Optical Properties of Direct Wafer Bonded Micro-Cavity Structures[J].Chinese Journal of Semiconductors,2006,27(13):304-308. |
| |
| Authors: | Lao Yanfeng Wu Huizhen Huang Zhanchao Liu Cheng and Cao Meng |
| |
| Affiliation: | State Key Laboratory of Functional Materials for Informatics ,Shanghai Institute of Microsystemand Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Functional Materials for Informatics ,Shanghai Institute of Microsystemand Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Functional Materials for Informatics ,Shanghai Institute of Microsystemand Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Functional Materials for Informatics ,Shanghai Institute of Microsystemand Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Functional Materials for Informatics ,Shanghai Institute of Microsystemand Information Technology,Chinese Academy of Sciences,Shanghai 200050,China |
| |
| Abstract: | Fabry-Perot micro-cavity resonator structures are directly wafer bonded.Their optical properties of reflectivity are measured using Fourier-transform infrared spectroscopy and simulated theoretically using transfer matrix method.An exponential variation of optical thickness for multi-layers at the both sides of the bonding interface is constructed to analyze the effects of wafer-bonding on the micro-cavity structures.Results show that lower-temperature bonding is advantageous for the fabrication of high-optical quality structures.But a defect-blocking layer should be involved into the wafer-boned structures for the improvement of bonding quality when a higher annealing temperature is used. |
| |
| Keywords: | direct wafer bonding interface defect reflectivity spectrum |
|
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
