Enhanced electron emission from phosphorus-doped diamond-cladsilicon field emitter arrays |
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Authors: | Ku TK Chen SH Yang CD She NJ Wang CC Chen CF Hsieh IJ Cheng HC |
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Affiliation: | Nat. Chiao Tung Univ., Hsinchu; |
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Abstract: | Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities |
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