| LDO低输出噪声的分析与优化设计 |
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| 引用本文： | 朱勤为,何乐年. LDO低输出噪声的分析与优化设计[J]. 电子器件, 2009, 32(5): 875-879,883 |
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| 作者姓名： | 朱勤为 何乐年 |
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| 作者单位： | 桂林电子科技大学信息与通信学院,广西,桂林,541004;浙江大学超大规模集成电路研究所,杭州,310027 |
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| 摘 要： | 为了降低一款LDO芯片的输出噪声,对LDO的噪声特性进行分析,根据其噪声特点,提出了三种降低LDO输出噪声的方法,分别是改变LDO的电路结构,对带隙基准进行滤波,设计低噪声带隙基准。在综合考虑芯片的面积和功耗后,采用第三种方法对一款LDO芯片输出噪声进行优化,设计了一个低噪声带隙基准（Bandgap reference）,在TSMC0.35μm工艺下仿真表明,10Hz到100kHz之间的集成输出噪声（Integrated output noise）从原来的808μV,降低到280μV。采用低噪声带隙基准可以有效的降低LDO芯片的输出噪声。
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| 关 键 词： | 集成电路设计 低压差线性稳压器 低噪声带隙基准电压 热噪声 闪烁噪声 |
Analysis and Optimization of a Low-noise LDO |
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| ZHU Qinwei,TANG Ning,WU Peng,HE Lenian. Analysis and Optimization of a Low-noise LDO[J]. Journal of Electron Devices, 2009, 32(5): 875-879,883 |
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| Authors: | ZHU Qinwei TANG Ning WU Peng HE Lenian |
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| Affiliation: | ZHU Qinwei1,TANG Ning1,WU Peng2,HE Lenian2(1.College of Information and Communication,Guilin University of Electronic Technology,Guilin Guangxi 541004,China,2.Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China) |
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| Abstract: | To reduce the noise of an LDO chip,the noise of an LDO was analyzed.Based on the noise characteristics,three methods of suppressing noise were proposed,i.e.to modify the circuit's topology,to add a low-pass filter at the output of band-gap reference and to design a low-noise band-gap reference.Considering the chip area and power consumption,the third method was employed to optimize the LDO's output noise.A low-noise band-gap reference was designed to suppress the noise substantially.The LDO was implemented ... |
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| Keywords: | IC design LDO Low noise Bandgap reference Thermal noise Flicker noise |
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