| InGaAs/GaAs应变量子阱能带结构的计算 |
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| 引用本文： | 宋晏蓉,华玲玲,张鹏,张晓.InGaAs/GaAs应变量子阱能带结构的计算[J].北京工业大学学报,2011,37(4):565-569. |
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| 作者姓名： | 宋晏蓉 华玲玲 张鹏 张晓 |
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| 作者单位： | 北京工业大学应用数理学院,北京,100124;北京工业大学应用数理学院,北京,100124;华北科技学院基础部,河北燕郊,101601 |
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| 基金项目： | 国家自然科学基金资助项目(60678010) |
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| 摘 要： | 为了进一步优化半导体激光器的性能,讨论了影响激光器中许多参数的能带结构.以InGaAs/GaAs应变量子阱材料为例,利用有限差分法对考虑价带混合效应的6×6 Luttinger-Kohn哈密顿量精确求解,得到导带和价带的能带结构图.计算结果表明,应变改变了传统无应变量子阱激光器中轻的导带有效质量与非常重的价带有效质量之间的巨大不对称性,更有利于提高激光器的性能.
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| 关 键 词： | 应变量子阱 能带结构 6×6 Luttinger-Kohn哈密顿量 有限差分法 |
Calculation of Band Structure of InGaAs/GaAs Strained Quantum Wells |
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| SONG Yan-rong,HUA Ling-ling,ZHANG Peng,ZHANG Xiao.Calculation of Band Structure of InGaAs/GaAs Strained Quantum Wells[J].Journal of Beijing Polytechnic University,2011,37(4):565-569. |
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| Authors: | SONG Yan-rong HUA Ling-ling ZHANG Peng ZHANG Xiao |
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| Affiliation: | SONG Yan-rong1,HUA Ling-ling1,2,ZHANG Peng1,ZHANG Xiao1(1.College of Applied Sciences,Beijing University of Technology,Beijing 100124,China,2.Basis Department,North China Institute of Science and Technology,Yanjiao 101601,Hebei,China) |
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| Abstract: | In order to further optimize the performance of semiconductor lasers,the band structure which influences many parameters of semiconductor lasers is discussed.Taking the InGaAs/GaAs strained quantum wells for an example,we obtain the conduction-band structures and the valence-band structures by using the finite difference method to solve the problem of 6×6 Luttinger-Kohn Hamiltonian which is considered the valence band mixing effect.The results show that the strain has changed the huge asymmetry between the light conduction band effective mass and the very heavy valence band effective mass in the traditional unstrained quantum well lasers.It is more conducive to improving the laser performance. |
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| Keywords: | strained quantum well band structure 6×6 Luttinger-Kohn Hamiltonian finite difference method |
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