| 耗尽型选择性掺杂异质结晶体管 |
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| 引用本文： | 陈定钦,张晓玲,熊思强,高翠华,周帆.耗尽型选择性掺杂异质结晶体管[J].电子与信息学报,1990,12(1):100-102. |
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| 作者姓名： | 陈定钦 张晓玲 熊思强 高翠华 周帆 |
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| 作者单位： | 中国科学院半导体所 北京
(陈定钦，张晓玲，熊思强，高翠华)，中国科学院半导体所 北京(周帆) |
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| 摘 要： | 设计和研制了耗尽型选择性掺杂异质结晶体管。外延选择性掺杂材料是由本所Fs-Ⅲ型分子束外延炉生长的。制作器件的材料在室温下,霍尔测量的电子迁移率为6500cm2/vs,二维薄层电子浓度ns=91011cm2。在77K时n=75000cm2/vs。测量了具有栅长1.21.5m,栅宽2180m耗尽型异质结器件的直流特性和器件的跨导,室温下gm=110～130ms/mm,而低温77K时,可达到200ms/mm。
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| 关 键 词： | 半导体器件 耗尽型异质结晶体管 MBE材料 剥离工艺 跨导 |
| 收稿时间： | 1988-1-24 |
| 修稿时间： | 1989-8-21 |
DEPLETION MODE SELECTIVE DOPED HETEROJUNCTION TRANSISTOR |
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| Chen Dingqin,Zhang Xiaoling,Xiong Siqiang,Gao Cuihua,Zhou Fan.DEPLETION MODE SELECTIVE DOPED HETEROJUNCTION TRANSISTOR[J].Journal of Electronics & Information Technology,1990,12(1):100-102. |
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| Authors: | Chen Dingqin Zhang Xiaoling Xiong Siqiang Gao Cuihua Zhou Fan |
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| Affiliation: | Institute of Semiconductor Academia Sinica Beijing |
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| Abstract: | Depletion Model Selective doped heterojunction transistor is designed and fabricated. Epitaxial modulation loping material were grown by a home-made MBE system. The gate length and width for low noise depletion devices were 1.2-1.5m and 2180m respecipely. The electron mobility of the material is typically 6500cm2/v.s at 300K and 75000 cm2/v.s at 77 K. The sheet electron concentration n, is 91011 cm-2. The transconductance of the depletion Mode levices is 100-130 ms/mm at room temperature. However at low temperature the transconductance is 200 ms/mm.Its noise figure is above 2-3dB. |
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| Keywords: | Semicoductor device Depletion Mode Heterojunction transistor MBE material: Transconductance |
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