Axial InP nanowire tandem junction grown on a silicon substrate |
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Authors: | Heurlin Magnus Wickert Peter Fält Stefan Borgström Magnus T Deppert Knut Samuelson Lars Magnusson Martin H |
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Affiliation: | Division of Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden. magnus.heurlin@ftf.lth.se |
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Abstract: | Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal-organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device. |
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