| 处理面垒探测器噪声不稳定及击穿现象的一种新方法 |
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| 引用本文： | 沈浩元.处理面垒探测器噪声不稳定及击穿现象的一种新方法[J].核技术,1986(9). |
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| 作者姓名： | 沈浩元 |
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| 作者单位： | 中国科学院上海原子核研究所 |
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| 摘 要： | 硅面垒探测器是半导体核辐射探测器中发展较早的一种器件,大多数情况下,采用N-型硅单晶,有些实验室也使用P-型硅单晶制备面垒探测器。因为硅的禁带宽为1.1eV,所以硅探测器的工作温度范围比锗探测器宽,它能在常温下工作,但是在40℃以上工作时,器件的漏电流和噪声随偏压升高而增大,经过70℃以上高温试验,器件往往变坏。美国加州大学劳伦
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| 关 键 词： | 面垒探测器 |
A new method of treating unstable noise and breakdown phenomenon in surface barrier detectors |
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| Shen Haoyuan.A new method of treating unstable noise and breakdown phenomenon in surface barrier detectors[J].Nuclear Techniques,1986(9). |
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| Authors: | Shen Haoyuan |
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| Abstract: | A new method of treating noise and breakdown phenomenon in transmission surface barrier detectors is reported. While a reverse bias is applied to the devices, the devices warm-up for short time and then cool down to room temperature, some may be recovered to normal characteristics. The result indicated that production rate of detectors were raised from 50-66 % to about 80% by this method |
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| Keywords: | surface barrier detector |
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