20·5% efficient silicon solar cell with a low temperature rear side process using laser‐fired contacts

The paper presents a rear side structure for crystalline silicon solar cells, which is processed at a maximum temperature of 220°C. Using two different material compositions for electrical and optical needs, the layer system has excellent passivation properties, enhances light trapping and allows for a good ohmic contact. With this structure we achieve an independently confirmed conversion efficiency η=20·5% on a 250 μm thick silicon solar cell. Due to the fact that the maximum process temperature is 220°C, this layer system enables new solar cell concepts. Copyright © 2006 John Wiley & Sons, Ltd.