Electron bombardment induced defect states in p-InP

A deep level transient spectroscopy (DLTS) study has been made of 1 MeV electron bombardment induced defect states in the lower half band gap of LEC grown Zn doped p-InP. One state was observed in the unirradiated material with a hole emission activation energy H of 0.15 eV. Irradiation resulted in two new states with H of 0.34 and 0.58 eV, and introduction rates dN_t/d? of 1 and 0.04 cm^?1, respectively. Annealing experiments revealed the appearance of an additional state with H(0.52 eV), and recovery of the 0.34 eV defect state above 150°C. The 0.52 eV and 0.58 eV states were found at the highest concentration near the metal-semiconductor interface. The implications of the large introduction rate of the 0.34 eV state are discussed.