Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration

The resistive switching memory of Ge nanowires (NWs) in an IrO_x/Al₂O₃/Ge NWs/SiO₂/p-Si structure is investigated. Ge NWs with an average diameter of approximately 100 nm are grown by the vapor–liquid-solid technique. The core-shell structure of the Ge/GeO_x NWs is confirmed by both scanning electron microscopy and high-resolution transmission electron microscopy. Defects in the Ge/GeO_x NWs are observed by X-ray photoelectron spectroscopy. Broad photoluminescence spectra from 10 to 300 K are observed because of defects in the Ge/GeO_x NWs, which are also useful for nanoscale resistive switching memory. The resistive switching mechanism in an IrO_x/GeO_x/W structure involves migration of oxygen ions under external bias, which is also confirmed by real-time observation of the surface of the device. The porous IrO_x top electrode readily allows the evolved O₂ gas to escape from the device. The annealed device has a low operating voltage (<4 V), low RESET current (approximately 22 μA), large resistance ratio (>10³), long pulse read endurance of >10⁵ cycles, and good data retention of >10⁴ s. Its performance is better than that of the as-deposited device because the GeO_x film in the annealed device contains more oxygen vacancies. Under SET operation, Ge/GeO_x nanofilaments (or NWs) form in the GeO_x film. The diameter of the conducting nanofilament is approximately 40 nm, which is calculated using a new method.