| 基于多值开关级代数的电容模型及其应用 |
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| 引用本文： | 胡谋,徐申生.基于多值开关级代数的电容模型及其应用[J].电子学报,1994,22(2):100-103. |
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| 作者姓名： | 胡谋 徐申生 |
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| 作者单位： | 上海铁道学院 |
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| 摘 要： | 本文应用多值开关级代数为ＭＯＳ电路中的电容建立模型，并提出了应用多值开关级代数分析ＭＯＳ动态电路、时延及电荷共享的方法。
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| 关 键 词： | 多值逻辑 电容模型 MOS电路 |
The Capacitor Model and Its Applications Based on Multiple-Valued Switch-Level Algebra |
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| Hu Mou,Xu Shensheng.The Capacitor Model and Its Applications Based on Multiple-Valued Switch-Level Algebra[J].Acta Electronica Sinica,1994,22(2):100-103. |
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| Authors: | Hu Mou Xu Shensheng |
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| Abstract: | The application of multiple-valued logic to model capacitors in MOS circuits is discussed in this paper.Based on this model,new methods for MOS dynamic circuit analysis,delay analysis and charge sharing analysis are proposed. |
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| Keywords: | Multiple-valued logic Capacitor model MOS circuits |
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