Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces |
| |
Authors: | A. Modic Y.K. Sharma Y. Xu G. Liu A.C. Ahyi J.R. Williams L.C. Feldman S. Dhar |
| |
Affiliation: | 1. Allison Laboratory, Physics Department, Auburn University, Auburn, AL, 36849, USA 2. Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ, 08854, USA
|
| |
Abstract: | A nitrogen plasma annealing process for gate dielectric applications in 4H-SiC metal oxide semiconductor (MOS) technology has been investigated. This process results in substantially greater interfacial N coverage at the SiO2/4H-SiC interface and lower interface trap densities than the state-of-the-art nitric oxide (NO) annealing process. Despite these exciting results, the field-effect mobility of MOS field-effect transistors (MOSFETs) fabricated by use of this process is very similar to that of NO-annealed MOSFETs. These results emphasize the importance of understanding mobility-limiting mechanisms in addition to charge trapping in next-generation 4H-SiC MOSFETs. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|