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GaSb Thermophotovoltaic Cells Grown on GaAs Substrate Using the Interfacial Misfit Array Method |
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| Authors: | Dante DeMeo Corey Shemelya Chandler Downs Abigail Licht Emir Salih Magden Tom Rotter Chetan Dhital Stephen Wilson Ganesh Balakrishnan Thomas E. Vandervelde |
| Affiliation: | 1. Renewable Energy and Applied Photonics Labs, ECE Department, Tufts University, Medford, MA, 02155, USA 2. Center for High Tech Materials, University of New Mexico, Albuquerque, NM, 87131, USA 3. Department of Physics, Boston College, 140 Commonwealth Avenue, Chestnut Hill, MA, 02467, USA |
| Abstract: | We present gallium antimonide (GaSb) p–i–n photodiodes for use as thermophotovoltaic (TPV) cells grown on gallium arsenide (100) substrates using the interfacial misfit array method. Devices were grown using molecular beam epitaxy and fabricated using standard microfabrication processes. X-ray diffraction was used to measure the strain, and current–voltage (I–V) tests were performed to determine the photovoltaic properties of the TPV cells. Energy generation at low efficiencies was achieved, and device performance was critically analyzed. |
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