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Dielectric Properties and Defect Chemistry of WO3-Doped K0.5Na0.5NbO3 Ceramics |
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| Authors: | Shuangshuang Wu Wenfeng Zhu Laijun Liu Danping Shi Shaoying Zheng Yanming Huang Liang Fang |
| Affiliation: | 1. State Key Laboratory Breeding Base of Nonferrous Metals and Specific Materials Processing, Key Laboratory of New Processing Technology for Nonferrous Metal and Materials, Ministry of Education, College of Material Science and Engineering, Guilin University of Technology, Guilin, 541004, China |
| Abstract: | The dielectric properties and conductivity behavior of WO3-doped K0.5Na0.5 NbO3 ceramics were investigated as a function of temperature (25°C to 600°C) and frequency (40 Hz to 106 Hz). The dielectric loss and direct-current (DC) conductivity of the ceramics depend strongly on the tungsten content. A high-temperature dielectric relaxation near temperature of 500°C was observed and analyzed using the semiempirical complex Cole–Cole equation. The activation energy of the dielectric relaxation was estimated to be ～2 eV and increased with increasing WO3. The frequency-dependent conductivity can be well described by the universal dielectric response law. The activation energy obtained from the DC conductivity changes from 0.93 eV to 1.49 eV. A possible mechanism for the high-temperature dielectric relaxation and conductivity is proposed based on the activation energy value and defect compensation. |
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