Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy |
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Authors: | Zeng Zhang Christine M. Jackson Aaron R. Arehart Brian McSkimming James S. Speck Steven A. Ringel |
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Affiliation: | 1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, 43210, USA 2. Materials Department, University of California, Santa Barbara, CA, 93106-5050, USA
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Abstract: | The energy band alignments of Ni/Al2O3/GaN heterostructures have been explored by internal photoemission (IPE) and capacitance–voltage (CV) measurements. By performing IPE measurements at both reverse- and forward-bias conditions, the Ni/Al2O3 Schottky barrier is found to be 2.9 ± 0.1 eV with the presence of a strong image force lowering effect, while the Al2O3/GaN conduction-band offset is determined to be 2.2 ± 0.1 eV and is insensitive to oxide electrical field. CV-based flat-band voltage analysis has further been performed on samples with different oxide thicknesses, not only confirming the IPE-measured band alignment but also revealing the presence of 3.0 × 1012 cm-2 net positive charge at the Al2O3/GaN interface. |
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