一种用于提取LDD结构n-MOSFET热载流子应力下界面陷阱产生的改进方法

提出了一种新的基于电荷泵技术和直流电流法的改进方法,用于提取LDDn MOSFET沟道区与漏区的界面陷阱产生.这种方法对于初始样品以及热载流子应力退化后的样品都适用.采用这种方法可以准确地确定界面陷阱在沟道区与漏区的产生,从而有利于更深入地研究LDD结构器件的退化机制.

An Improved Method to Extract Generation of Interface Trap in Hot-Carrier-Stressed LDD n-MOSFET

A new improved technique,based on the direct current current voltage and charge pumping methods,is proposed for measurements of interface traps density in the channel and the drain region for LDD n MOSFET.This technique can be applied to virgin samples and those subjected to hot carrier stress,and the latter are known to cause the interface damage in the drain region and the channel region.The generation of interface traps density in the channel region and in the drain region can be clearly distinguished by using this technique.