Growth of epitaxial Si1-xGex layers at 750° C by VLPCVD |
| |
Authors: | S M Jang C Tsai R Reif |
| |
Affiliation: | (1) Department of Materials Science and Engineering, Massachusetts Institute of Technology, 02139 Cambridge, MA;(2) Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 02139 Cambridge, MA |
| |
Abstract: | Silicon-germanium epitaxial layers have been grown on (100) silicon at 750° C by very low pressure chemical vapor deposition
(VLPCVD). Pure SiH4 and GeH4 were used as the processing gases. Commensurate films of Si1-x
withx < 0.13 have been deposited up to a critical thickness about 2-4 times larger than the equilibrium value. Interrupted growth,
controlled by gas switching, was employed to improve interfacial abruptness. The films have been characterized as a function
of SiH4 and GeH4 flow rates and germanium content. Growth rate and germanium incorporation as a function of GeH4:SiH4 input ratio and total gas flow rate have been studied. We observed that the growth rate of the Si1-x
Ge
x
layer decreases as the germanium content in the film or the GeH4:SiH4 ratio increases at 750° C using VLPCVD. We also found that, for a given GeH4:SiH4 ratio, the germanium incorporated in the solid is independent of the total gas flow rate. |
| |
Keywords: | SiGe VLPCVD GeH4:SiH4 ratio |
本文献已被 SpringerLink 等数据库收录! |
|