Doping behavior of iodine in Hg0.8Cd0.2Te+

Iodine doped single crystal samples of Hg_0.8Cd_0.2Te were annealed at temperatures varying from 450 to 600°C in Hg vapor and quenched to room temperature. Hall effect measurements at 77 K on the crystals cooled to room temperature indicate the samples to be n-type after anneals at high Hg pressures whereas they turn p-type after anneals at low Hg pressures; the electron concentration increases with increase in Hg pressure. The results are explained on the basis that the crystals are saturated with (Hg,Cd)I₂, with the iodine being present as donors occupying tellurium lattice sites (I_Te) and a fraction being present as (I_TeV_Hg)’ species formed from the iodine on tellurium lattice sites (I_Te) pairing with the doubly ionized native acceptor defects (V^Hg/11). The solubility of the I_Te species increases with increase in Hg pressure, whereas that of the (I_TeV_Hg)’ species increases with decrease in Hg This work was supported by NASA under contract NAS8-33245 pressure. Equilibrium constants for the incorporation of the iodine species as well as the pairing reaction have been established