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1.46~1.66GHz 250W宽带硅微波脉冲大功率管
引用本文:王因生,李相光,傅义珠,王佃利,丁晓明,盛国兴,康小虎.1.46~1.66GHz 250W宽带硅微波脉冲大功率管[J].半导体学报,2008,29(5):965-969.
作者姓名:王因生  李相光  傅义珠  王佃利  丁晓明  盛国兴  康小虎
作者单位:南京电子器件研究所,南京210016
摘    要:报道了L波段高端中脉冲250W宽带硅微波脉冲大功率晶体管研制结果.该器件采用微波功率管环台面集电极结终端结构、非线性镇流电阻等新工艺技术,器件在1.46~1.66GHz频带内,脉宽200μs,占空比10%和40V工作电压下,全带内脉冲输出功率大于250W,功率增益大于7.0dB,效率大于45%.

关 键 词:  微波  功率管
文章编号:0253-4177(2008)05-0965-05
修稿时间:2007年10月12

1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors
Wang Yinsheng,Li Xiangguang,Fu Yizhu,Wang Dianli,Ding Xiaoming,Sheng Guoxing and Kang Xiaohu.1.46~1.66GHz 250W Broadband Silicon Microwave Pulsed High Power Transistors[J].Chinese Journal of Semiconductors,2008,29(5):965-969.
Authors:Wang Yinsheng  Li Xiangguang  Fu Yizhu  Wang Dianli  Ding Xiaoming  Sheng Guoxing and Kang Xiaohu
Affiliation:Nanjing Electric Devices Institute,Nanjing 210016,China;Nanjing Electric Devices Institute,Nanjing 210016,China;Nanjing Electric Devices Institute,Nanjing 210016,China;Nanjing Electric Devices Institute,Nanjing 210016,China;Nanjing Electric Devices Institute,Nanjing 210016,China;Nanjing Electric Devices Institute,Nanjing 210016,China;Nanjing Electric Devices Institute,Nanjing 210016,China
Abstract:Using novel technologies such as the mesa junction termination structure with one guard ring and a nonlinear blasting resistor of microwave power transistors,a high L-band medium silicon pulse power transistor has been developed.Under 40V supply voltage,internally matched devices cover the frequency for high L-band radar applications from 1.46~1.66GHz with a pulsed output power of 250W and 45% collector efficiency.The gain is more than 7.0dB.
Keywords:silicon  microwave  power transistor
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