AlGaAs/GaAs太阳电池抗辐照性能的研究(英文) |
| |
引用本文: | 吴正云,吴荣华,陈朝,刘士毅,闵惠芳,钟金泉,王振英,王家宽.AlGaAs/GaAs太阳电池抗辐照性能的研究(英文)[J].固体电子学研究与进展,1989(4). |
| |
作者姓名: | 吴正云 吴荣华 陈朝 刘士毅 闵惠芳 钟金泉 王振英 王家宽 |
| |
作者单位: | 厦门大学物理系
(吴正云,吴荣华,陈朝,刘士毅),中国科学外海冶金研究所
(闵惠芳,钟金泉,王振英),中国科学外海冶金研究所(王家宽) |
| |
摘 要: |
|
Studies on the Irradiation Resistance of AIGaAs/GaAs Solar Cell |
| |
Abstract: | The changes of performence of AlGaAs/GaAs heteroface solar cell after 1 -MeV electron irradiation has been studied by the experimental and numerical fitting. Using an improved damped least square method, the spectral response and dark J-V characteristic of the cells are fitted according to the various theoretical formulas. From the fitting calculation, a number of materials, structural and electric parameters of the cell are obtained. The experimental data and calculated results show that the critical irradiation flux of the cell is about 2.2×1014 cm-2, the damge constant KL for the minority carrier diffusion length in n-GaAs layer due to irradiation is found to be larger than that in p-GaAs, layer, they are about 7.0×10-3 and 2.2×10-7, respectively, the degradation of the minority carrier diffusion length in p-GaAs layer and the increase in the recombination velocity at interfaec are the majar reasons for the cell performence degradation. The cell with a shallow junction has higher irradiation resistance than the one with a deep junction. Based on the studies, the method for improving the irradiation resistance of the cell is discussed. |
| |
Keywords: | |
本文献已被 CNKI 等数据库收录! |
|