Resistivity increase in MBE Ga0.47In0.53As following ion bombardment

Resistivity increase was compared following various doses of different 100 kV ions implanted into Ga0.47In0.53As. The largest resistivity increase of n-type Ge doped GaInAs resulted from a boron ion implant, and increased to a total of 280 times the original resistivity after heating for 15 minutes at 200°C. Boron ion bombardment can be used to isolate devices in a planar GaInAs integrated circuit process.