Application of the SIMS Method in Studies of Cr Segregation in Cr-Doped CoO: I, Aspects of Quantitative Analysis |
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| Authors: | Andrzej Bernasik Janusz Nowotny Stanislas Scherrer Sylvian Weber |
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| Affiliation: | Laboratoire de Me tallurgie Physique and Science des Mate riaux, Ecole des Mines de Nancy, Parc du Saraupt, 54042 Nancy Cedex, France;Australian Nuclear Science and Technology Organisation, Advanced Materials Program, Lucas Heights Research Laboratories, Menai, NSW, 2234, Australia |
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| Abstract: | Aspects of calibration of intensities of SIMS secondary ions vs concentration as well as sputtering time vs depth are considered for Cr-doped CoO. Advantages and limitations of the SIMS method in quantitative analysis of segregation-induced concentration profiles in oxide crystals are discussed. The studies indicate a substantial effect due to charging the surface during sputtering. The depth calibration was performed by using the Ta2O5/Ta system as a standard. Good depth resolution was revealed. The calibration dependence of Cr intensities on concentration is characterized by a wide scatter of data caused by charging the surface. Very good shape reproducibility of the intensity ratio vs depth profiles was revealed. Therefore, normalized intensity ratios can be used for calibration. |
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