Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors |
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| Authors: | Nicolas Faralli Himanshu Markandeya Julien Branlard Marco Saraniti Stephen M Goodnick David K Ferry |
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| Affiliation: | (1) ECE Department, Illinois Institute of Technology, 3301 South Dearborn Street, Chicago, IL 60616, USA;(2) ECE Department, Arizona State University, Tempe, AZ, 85287, USA;(3) USA Street, Chicago, IL 60616, USA |
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| Abstract: | In this work, Indium Antimonide (InSb) quantum well transistors are investigated using full-band Cellular Monte Carlo simulations.
Both Depletion and Enhancement transistors are simulated, the latter being modeled using a deep recess gate. The steady-state
characteristics of the devices are analyzed showing an average sub-threshold slope of 326 mV/dec and a DIBL of 569 mV/V. The
small-signal behavior of the depletion and enhancement mode transistors is also investigated, and an average cut-off frequency
of 380 GHz is computed. Finally, a comparison is performed between the different transistors showing all the advantages of
the deep recess gate configuration such as a better sub-threshold slope and cutoff frequency. |
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| Keywords: | Simulation Monte Carlo Indium Antimonide Quantum well transistor |
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