Calculation of stress intensities at sharp notches in anisotropic media

We present a procedure to calculate mode I and II notch stress intensities in anisotropic media using the path-independent H-integral. The method is based on coupling the analysis of asymptotic stress and displacement fields near a sharp notch with a path independent integral that results from the application of Betti's reciprocal theorem to the notched solid. The approach is demonstrated for two loading/geometry combinations that arise naturally in etched single crystal silicon: mode I loading of a 70.53° notch and mixed mode I and II loading of a T-structure with a 90° notch. Results agree well with those obtained by correlating computed notch-flank displacements with the asymptotic solution.