| 4～8GHz宽带单片集成低噪声放大器设计 |
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| 引用本文： | 俞汉扬,陈良月,李昕,杨涛,高怀. 4～8GHz宽带单片集成低噪声放大器设计[J]. 电子科技, 2011, 24(12): 38-41 |
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| 作者姓名： | 俞汉扬 陈良月 李昕 杨涛 高怀 |
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| 作者单位： | (1.东南大学 集成电路学院,江苏 南京 210096;2.苏州英诺迅科技有限公司&苏州市射频功率器件与电路工程技术研究中心,江苏 苏州 215123) |
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| 摘 要： | 基于0.15μm GaAs PHEMT工艺设计了一款C波段宽带单片集成低噪声放大器。电路由三级放大器级联而成,三级电路结构均使用电阻自偏压技术来实现单电源供电,它既可保证PHEMT管处于低噪声高增益的工作点,又可将所有元器件集成在单片GaAs衬底上,解决了供电复杂的问题。第三级电路采用了并联负反馈结构,降低了带内低频端...
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| 关 键 词： | 自偏置 低噪声放大器 PHEMT 单片微波集成电路 C波段 |
Design of 4-8 GHz Broadband Monolithic Low Noise Amplifier |
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| YU Hanyang,CHEN Liangyue,LI Xin,YANG Tao,GAO Huai. Design of 4-8 GHz Broadband Monolithic Low Noise Amplifier[J]. Electronic Science and Technology, 2011, 24(12): 38-41 |
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| Authors: | YU Hanyang CHEN Liangyue LI Xin YANG Tao GAO Huai |
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| Affiliation: | (1.IC Institute,Southeast University,Nanjing 210096,China;2.Suzhou Innotion Tech Co.,Ltd & RF Power Device and Circuit Engineering Research Center,Suzhou 215123,China) |
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| Abstract: | A C-Band broadband monolithic low noise amplifier is designed based on 0.15 μm GaAs PHEMT process.The circuit is formed by cascading three stages of amplifiers.To solve the problem of complex power supply,each of the stage uses a self-biased resistance to achieve a single power supply.It not only ensures PHEMT to work at an optimum operation point with low noise and high gain,but integrates all components（including the bias circuit） in a monolithic GaAs substrate also.A parallel negative feedback structure is used in the third stage of the circuit to reduce gain of the low-frequency band and raise gain of the high-frequency band,which improves the gain flatness of the amplifier.Results from simulation based on AWR Microwave Office show that the designed LNA has a noise figure（NF） below 1.4 dB,a power gain of 23 dB,a gain flatness of less than ±0.5 dB and input and output VSWR of less than 2.0 over the frequency range of 4～8 GHz. |
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| Keywords: | self-bias LNA PHEMT MMIC C-band |
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