晶体管的二次击穿及检测

晶体管的二次击穿线是构成其安全工作区（SOA）的重要曲线,作者对该问题进行了多年的探讨和实验。文章详尽地论述了二次击穿的机理是由于电流或电压应力所引起的破坏性结果。简要叙述了芯片材料、制造与组装工艺对二次击穿的影响,指出了器件的电性能、应用电路以及环境温度与二次击穿的关系,从而为晶体管避免二次击穿提供了方向。最后介绍了...

The Second Breakdown and Testing of Transistor

The transistor＇s second breakdown curve is an important curve to constitute its Safety Operation Area（SOA）.This problem has been researched and tested for years.This paper expounds the second breakdown mechanism of transistors with details;It occors because of the devastating results caused by current or voltage stress.The article brie？ y introduces how the chip material,manufacturing and assembly engineer-ing affect the second breakdown of transistors,indicates the relation between thesecond breakdown of transistors and electrical property,application circuit and environmental temperature,therefore provides a direction to avoid the second breakdown of transistor.At last,a simple methodto test the second breakdown is introduced in this paper.Base on the measured data,this article describes the secondary breakdown characteristic curves which form the two types of power transistors（2SD880,3DD13003）.The paper also illustrates clear pictures of damaged chip,and the characteristic curves when the second breakdown happens,for reader＇s reference.